SSM6J215FE Datasheet, Toshiba Semiconductor

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 79 mΩ (max) (@V.

* Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.